Relaxation of amorphous structure of implanted Si under RF plasma treatment: Raman and EPR study

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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V V Artamonov, V S Lysenko, A N Nazarov, V V Strelchuk, M Ya Valakh and I M Zaritskii, Semicond. Sci. Technol., Vol.6, pp. 1 4 (1991)