The Influence of Defect Surface Layers on the Capacitive Properties of MOS Structures

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

R. N. Litovskii, V. S. Lysenko, A. N. Nazarov, T. E. Rudenko, S. B. Kaschieva, and N. R. Nedev, phys. stat. sol. (a) vol.77, pp.699-707 (1983)

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