On the mobility behavior in highly doped junctionless nanowire SOI MOSFETs

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Rudenko T., Yu R., Barraud S., Cherkaoui K., Razavi P., Fagas G., Nazarov A.N. // Advanced Materials Research. - 2014. -Vols. 854. - pp 35-43.

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