On the gm/ID-based approaches for threshold voltage extraction in advanced MOSFETs and their application to ultra-thin body SOI MOSFETs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Rudenko T., Md Arshad M.K., Raskin J.-P., Nazarov A., Flandre D., Kilchytska V. // Solid-State Electronics. – 2014. - V.97. - pp.52–58.