Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P) under high uniaxial pressure X||[111]

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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V. Shenderovskii, V. Baidakov, S. Budsuliak, A. Gorin, V. Ermakov, V. Kolomoets, E. Liarokapis, G. Gromova, B. Kazbekova, L. Taimuratova. // Phys. Stat. Solidi B, V.246, N3, P.612–614 (2009)

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