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Department of Physics of Optoelectronic Devices
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Head of department: Dr. Stronski Alexander Phone: +38 044 525-60-40 e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it. |
Staff
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Prof. Dr. Oleksenko Pavel Corresponding member of NAS of Ukraine
Principal Researcher
Phone: +3 8044 525-63-50
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Kretulis Vladimir Scientific Researcher |
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Goroneskul Viktor Scientific Researcher |
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Minakova Irina Scientific Researcher |
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Dr. Bacherikov Yuriy Principal Researcher
Phone: +3 8044 525-73-64,
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Denisova Zinaida Senior scientific researcher |
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Veligura Lyudmila Scientific Researcher
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Zhuk Anton Scientific Researcher |
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Paiuk Alexander Scientific Researcher
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Bogoslovskaya Alla Senior scientific researcher |
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Bogoslovsky Sergey Lead engineer
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Kostyukevych Sergiy O.
Tel.: +38 044 525 6205
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Email:
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Kateryna V. Kostyukevych Tel.: +38 044 525 6205
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Viktor O. Lysiuk Tel.: +38 044 525 6205
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Anastasiya A. Koptiukh
Tel.: +38 044 525 6205
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Valeriy I. Pogoda
Tel.: +38 044 525 6205
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Veleschuk Vitaly Petrovych Ph.D., senior scientist Ph.: +38 044 525-60-40 e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
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Prof. Dr. Vlasenko Alexandr Ivanovich
Phone.:525-60-97 e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
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Vlasenko Zoya Kostyantinovna Ph.D., senior scientist Ph.:525-60-97 e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
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Gnatyuk Volodymyr Anastasiyovych Ph.D., Associate professor, senior scientist Ph.: +38 044 525-60-40 e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
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Gentsar Petro Olexiyovich Ph.D., senior scientist Ph.: +38 044 525-60-40 e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
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Levytskyi Sergiy Nikolayovich Ph.D., senior scientist Ph.: +38 044 525-60-40 e-mail : This email address is being protected from spambots. You need JavaScript enabled to view it.
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№10-2 Materials Technology Laboratory for Optoelectronics
Head od Laboratory Shutov Stanislav Viktorovich
Field of Research
The main research and achievements of scientists of the department are made in the following areas:
- Developing of the generalized methods of mathematical modeling of optoelectronic transducers, optoelectronic circuits theory and space of generalized parameters of optoelectronics;
- Development of optical media for transmission, conversion, registration and display of information;
- Physics of electroluminescence phenomena in thin film structures;
- Development of functional series optron devices;
- Development of functional optoelectronic devices for displaying information in analog gauges;
- Synthesis of luminophore suspensions for white LED task lighting systems of high quality;
- Creation of the system of parameters and measurement equipment for the characterization of optron devices and their components. Development of the sensors for monitoring environmental parameters on the basis of optron systems with open optical channel.
The department was founded in the late 60s of the twentieth century on the basis of the scientific group of the department №5 of the Institute of Semiconductor Physics of NASU. V.Ye. Lashkaryova and the interdepartmental laboratory of Optoelectronics VO "Tochelektroprylad" and the Academy of Sciences of the USSR.
The main task of the department is the development of purposeful basic and applied research to study the possibilities of optoelectronics and the implementation of its ideas in various fields of instrumentation for automation systems, information display and transmission, information and measurement systems, lighting and sensors. Solving this problem allowed the staff to develop new approaches and create the concept of optoelectronics as a creative multifunctional technology of modern instrumentation. Optoelectronics has introduced into electronic instrumentation new semiconductor and optical materials and structures, a wide range of physical phenomena of both electrical and wave nature, new principles of construction and design and technological solutions. The main developments and achievements of scientists of the department are made in the following areas:
The main directions of scientific research and scientific and technical developments are:
(1) Formation and self-organization of point defects and modification of surface morphology in crystals and films of A2B6 and A3B5 semiconductors in interaction with nanosecond pulses of laser radiation to create ordered nano- and microstructures.
(2) Formation of ohmic and diode structures based on Cd (Zn) Te crystals by laser and ion-plasma methods for uncooled X-ray and gamma radiation detectors with high energy resolution.
(3) Laser-induced formation of parametrized labels in transparent dielectrics (glass and polymers) undoped and with light-absorbing impurities (nanoparticles, nanocrystals) and creation of stable luminescent centers in light-sensitive materials based on chromones for recording information and creating images.
(4) Processes of natural and external field-induced degradation of LED structures, including nanostructures. Creation of methods and means of diagnostics and control insitu of reliability of light-emitting structures.
(5) Diagnosis, development and manufacture of laser and anti-laser systems and complexes.
(6) Development of physical bases for creation of new materials, nanocomposite environments, Management of physical and chemical properties of materials, research of physics of processes of interaction of electromagnetic radiation with such environments / Creation on the basis of the developed environments of elements and devices of optoelectronics;
(7) Investigation of photoelectric properties of semiconductors and nanostructured media; study of patterns of influence on luminescent characteristics and microstructural transformations in dispersion two-component materials, which are caused by a number of low-energy external influences; modeling and obtaining multifunctional nanostructured media; development of elements of electroluminescent and sensory devices.
(8) Optoelectronic sensors, semiconductor optical radiation transducers and integrated optics devices. Instrumental support of meteorological and ecological monitoring of the atmospheric environment by developing methods, structure of construction and creation of prototypes of technical models of optoelectronic sensors with high technical and economic characteristics.
The vast majority of work is carried out in the field of semiconductor materials science and sensor systems, the physics of the interaction of electromagnetic radiation with media. Fundamental research and development of physical bases for the creation of new materials, nanocomposite media and their practical applications for the creation of elements of optoelectronics, optoelectronic sensors, semiconductor optical transducers and integrated optics devices.
The Department of Physical and Optoelectronic Devices conducts research in the scientific areas of physics of the processes of interaction of electromagnetic radiation with matter, optoelectronics and semiconductor materials science and sensor systems.
Study of physico-chemical processes in chalcogenide semiconductors under the action of laser and electron irradiation, the development of recording media for recording information on optical disks and the technology of manufacturing and replicating holographic protective elements. Investigation of the processes of super-dense recording of information in nano-sized environments and the development of optical information reading systems based on diffraction structures for biosensors. Investigation of new technological possibilities of increasing sensitivity of bio-chemical sensors based on surface plasmon resonance (SPR) and development of new sensor technologies based on optical thin-film transducers for solving practical problems of ecology, medicine and veterinary science.
The basis of the research strategy is the approach implemented in cooperation with research groups (cooperation agreements have been concluded with NTUU "KPI", Kamenets-Podolsky National University, Research Institute of FHP BSU (Minsk), joint work with scientists of Taras Shevchenko National University, NTU "KPI", the Czech Republic, Slovakia, Finland, Belarus, Moldova), working towards the production of materials and structures with new physical properties and their modification in the production process or appropriate processing after the production stage. The research strategy involves establishing causal relationships between the technologies of production and structural properties of objects, their physicochemical characteristics and the nature of the processes of interaction of electromagnetic radiation with matter and other physical processes.
An important area of research is the development created
Achievements
The optical properties of chalcogenide glass thin films and hybrid (organic-inorganic) films, thin polymer films based on polyepoxypropylcarbazole (PEPK) were investigated in order to obtain polymer coatings by applying a solution with a given thickness and optical properties. Spectroscopy of thin films showed good homogeneity of the obtained layers and high surface quality.
The defective structure of Ge5As37S58 chalcogenide glasses was investigated by the method of positron annihilation spectroscopy (namely the method of studying the time distribution of annihilation photons). For the composition of Ge5As37S58, the size of nanocavities was estimated. Analysis of the structure of the glasses was also performed using Raman scattering and showed the presence, in addition to the basic structural units of Ge (S1 / 2) 4 and As (S1 / 2) 3, as well as the presence of nonstoichiometric structural elements
The possibility of electron-beam and holographic recording of surface-relief structures using multilayer nanostructures based on chalcogenide glasses as recording media is shown. Diffraction gratings were recorded using electron beam and holographic recording on multilayer Ge5As37S58 – Se nanostructures. Combination scattering studies have shown the active role of Se in the formation of lattice reliefs in nomultilayer Ge5As37S58 – Se structures. AFM studies have shown the high quality of the reliefs of the obtained holographic gratings. Also electron beam pixel-by-pixel images of coats of arms of Ukraine and Moldova, texts, image size was 512 × 512 pixels (size of one pixel was ~ 2 μm) .. Using multilayer nanostructures As2S3-Se recorded holographic grids with a spatial frequency of 1000-1400mm-1.
The polarization dependence of the surface relief kinetics of optical elements using composite nanostructures based on chalcogenide glassy semiconductors as recording media has been established. Composite dependences of luminescent properties of chalcogenide glasses with modifying elements are obtained. For the first time the possibility of simultaneous formation of surface and magnetic reliefs by direct holographic recording using multilayer nanostructures based on chalcogenide glasses is shown.
In highly dispersed semiconductor materials, a nonlinear dependence of the quantum yield of photoluminescence on the particle size, in the size range from tens and above microns to nanometer units, has been revealed. Reducing the particle size to values close to or less than twice the length of the region of the spatial charge leads to a significant decrease in the efficiency of luminescence or its complete absence. This is due to the reduction of the surface barrier height (Usp), which facilitates the exit of photoexcited media to the return followed by their non-radiative recombination. In addition, a decrease in the position of the EF also leads to an increase in the contribution to the recombination of non-radiative channels. At the same time, the reduction of particle sizes to values smaller than the Bohr radius of the exciton already leads to an increase in the quantum yield of their luminescence due to the higher rate of radiative recombination in quantum-sized particles compared to bulk material.
A meteorological optoelectronic sensor has been developed and created, in which the proposed methods of increasing accuracy (reduction of methodological error in nephelometric equation to 1.4%), expansion of dynamic range and improvement of noise protection against background illumination when measuring meteorological range of visibility have been implemented. algorithmic and instrumental approaches. This model of the optoelectronic sensor, connected according to the developed program with the PC, is mode-controlled by the operator, automatically provides measurement results and is a complete instrument-measuring means of meteorological visibility.
In result of comparative analysis of different methods and technologies forming nanoscale structures on the films of chalcogenide vitreous semiconductors to increase the density of information and research to optimize recording modes It have been shown that the exposure of films of chalcogenide vitreous semiconductor optical radiation focused by diffractionally limited optical systems, it must be used film with a nonlinear threshold exposure characteristic. The nonlinear threshold exposure characteristic of inorganic photoresists helps to obtain nano-sized structures on them at laser exposure for the formation of the originals of optical signalograms.
On the basis of complex studies of the characteristics of gold films on a plastic substrate as a sensitive sensory element on the basis of the surface plasmon resonance, the thickness of the gold film and the substrate material for a multi-element sensor based on the surface plasmon resonance are optimized. A model of optical data readout system from a photoconverter for a multielement immunosensor based on a surface plasmon resonance is developed.
Based on comprehensive studies of the influence of thermal annealing of gold films on the effectiveness of SPR sensors and their parameters and long-term stability shows that the best performance is achieved at annealing temperature 120 C for 30 minutes in the air. For this temperature characteristic smoothing small-scale topography gold film, which reduces the intensity of the scattering outage conditions, to reduce the rate of extinction stabilize optical characteristics and form on the surface of highly ordered Nanosized protective and stabilizing layer thiol.
Developments
• The dominant physical processes are determined and the fundamental mechanisms of transformation of point-defect structure and surface morphology of CdTe semiconductor crystals, which take place under the action of short laser pulses in cases of formation of defect-deformation micro- and nanostructures, surface-barrier structures, nanolayers from electrical properties, as well as surfaces with nanostructured relief.
• Laser and ion-plasma methods for efficient surface treatment of CdTe and Cd1-xZnxTe semiconductors have been developed to provide surface modification, formation of ohmic contacts or Schottky rectifier contacts, doping of the surface layer and creation of pn junction and passivation of surface reagents for crystals for radiation with low leakage current (dark current), high energy resolution and sufficient stability of parameters when operating at room temperature under conditions of severe radiation.
• X-ray and gamma radiation detectors were made as diode structures based on CdTe semiconductor crystals (10 × 10 × 10 × 0.75 mm3), detector modules (4 detectors each) were formed, appropriate electronics were developed (together with Japanese partners) and 7 portable meters were designed and tested. with high detection ability.
Production of Optical Elements by using AsSSe based chalcogenide glasses for CD/DVD technology.
Equipment
Optical table, optical plate, HeNe laser LGN-222, optical elements mounts, spatial filters with pinholes 10, 15, 20 and 30 microns, divergent lenses, prysms, gradient transparency filter.
Projects
No Project title, [partners] Program, terms Role, finance
- Development of Cd(Zn)Te-based X/gamma-ray detectors with high resolution for security and diagnostics instruments. [1], [2], [8]. 2020 Cooperative Research at Research Center of Biomedical Engineering, (Research Institute of Electronics, Shizuoka University), Japan (No 2018), 01.06.2020-31.03.2021. Leader (Ukr.) 180 000 JPY 5 participants.
- Development of the compact Pockels cell driver for formation of power subnanosecond laser pulses. [1], [2], [14]. 2020 Cooperative Research at Research Center of Biomedical Engineering, adopted as 2020 Cooperative Research at Research Institute of Electronics, Shizuoka University, Japan, (No 2071), 01.06.2020-31.03.2021. Participant 180 000 JPY 5 participants.
- Substrate formation for low dimensional structures. [1], [2], [15], [16], [18]. 2020 Cooperative Research at Research Center of iomedical Engineering, adopted as 2020 Cooperative Research at Research Institute of Electronics, Shizuoka University, Japan, (No 2067), 01.06.2020-31.03.2021. Participant 180 000 JPY 5 participants.
- Continuous microcrystallization during thermally induced motion of inclusions. [1], [2], [15], [16], [18]. 2020 Cooperative Research at Research Center of Biomedical Engineering, adopted as 2020 Cooperative Research at Research Institute of electronics, Shizuoka University, Japan (No 2066), 01.06.2020-31.03.2021. Participant 180 000 JPY 5 participants.
- Fabrication and characterization of high energy resolution CdZnTe detectors for radiation detection applications. [1], [8], [20]. The Fundamental Research Funds for the Central Universities, China, (No 3102019ghxm015), 01.01.2019-31.12.2020. Leader (Ukr.) 50 000 RMB Funded by the Chinese side, 6 participants.
- Exploring novel perovskite single-crystal based gamma-ray detector for trace environmental radioactivity monitoring. [1], [8], [19]. Proposals of the Joint Ukraine - The People’s Republic of China R&D Projects for the period of 2019-2020 (adopted by the Ministry of Science and Technology of the People's Republic of China, (No CU03-15), 05.2019-31.12.2020. Leader (Ukr.) Funded by the Chinese side, 8 participants.
- Formation of a quasiperiodic relief on vicinal surfaces. [1], [2], [15], [16], [18]. 2019 Cooperative Research at Research Center of Biomedical Engineering, adopted as 2019 Cooperative Research at Research Institute of Electronics, Shizuoka University, Japan (No 2077), 01.08.2019-31.03.2020. Participant 171 000 JPY 6 participants.
- Development of Cd(Zn)Te-based X/gamma-ray detectors with high resolution for security and diagnostics instruments. [1], [2], [8]. 2019 Cooperative Research at Research Center of Biomedical Engineering, (Research Institute of Electronics, Shizuoka University), Japan, (No 2022), 14.05.2019-31.03.2020. Leader (Ukr.) 180 000 JPY 4 participants.
- Radiation-induced motion of liquid inclusions in crystals. [1], [2], [15], [16], [18]. 2019 Cooperative Research at Research Center of Biomedical Engineering, adopted as 2019 Cooperative Research at Research Institute of Electronics, Shizuoka University, Japan (No 2076), 14.05.2019-31.03.2020. Participant 155 000 JPY 5 participants.
- Development of perovskite single crystal ray detectors for environmental radioactive contamination monitoring. [1], [19]. Collaborative research project in the frame of Short-term Recruitment Program of Foreign Experts in Anhui (APFEP), China, 05.2019-12.2019. Leader 100 000 RMB
- Development of Cd(Zn)Te-based X/gamma-ray detectors with high resolution for security and diagnostics instruments. [1], [2], [8]. 2018 Cooperative Research at Research Center of Biomedical Engineering, (Research Institute of Electronics, Shizuoka University), Japan, (No 2035), 14.05.2018-31.03.2019. Leader (Ukr.) 187 000 JPY 4 participants.
- Nonlinear waves of elementary step density on the vicinal surfaces of growth. [1], [2], [16], [17], [18]. 2018 Cooperative Research at Research Center of Biomedical Engineering, adopted as 2018 Cooperative Research at Research Institute of Electronics, Shizuoka University, Japan, (No 2021), 14.05.2018-31.03.2019. Participant 165 000 JPY 5 participants.
- Sensor network for the localization and identification of radiation sources (SENERA). [1], [2], [4], [5], [6], [7], [8], [9]. Collaborative project of The Science for Peace and Security Program of NATO (Grant NUKR.SFPP 984705), 2015-2018. Partner country project director 173 000 EUR (Ukr.), total: 390 000 EUR 15 participants.
- Development of Cd(Zn)Te-based X/gamma-ray detectors with high resolution for security and diagnostics instruments. [1], [2], [8]. 2017 Cooperative Research at Research Center of Biomedical Engineering, Japan (Research Institute of Electronics, Shizuoka University), Japan, (No 2015), 17.04.2017-31.03.2018. Leader (Ukr.) 190 000 JPY 4 participants.
- Laser-induced marking in glasses and polymers doped by light-absorbing microinclusions and nanocrystals. [1], [2], [8], [13], [14]. 2017 Cooperative Research at Research Center of Biomedical Engineering, adopted as 2017 Cooperative Research at Research Institute of Electronics, Shizuoka University, Japan, (No 2014), 17.04.2017-31.03.2018. Participant 170 000 JPY 6 participants.
Partner institutions of the international research projects and programs listed above:
[1] V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine.
[2] Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan.
[3] Technological Educational Institute of Sterea Ellada, Psahna - Evia, Greece.
[4] Institute of Nuclear and Particle Physics, National Center for Scientific Research “Demokritos”, Athens, Greece.
[5] The Greek Atomic Energy Commission, Athens, Greece.
[6] The Hellenic Army Academy, Athens, Greece.
[7] Yuriy Fedkovych Chernivtsi National University, Chernivtsi, Ukraine.
[8] Taras Shevchenko National University of Kyiv, Kyiv, Ukraine.
[9] National Center of Radiobiology and Radiation Protection, Sofia, Bulgaria.
[10] Polish Academy of Sciences, Warsaw, Poland.
[11] College of Nanotechnology, King Mongkut's Institute of Technology Ladkrabang, Bangkok, Thailand.
[12] Synchrotron Light Research Institute, Nakhon Ratchasima, Thailand.
[13] Saint-Petersburg State Technological Institute (Technical University), Saint-Petersburg, Russian Federation.
[14] Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, Saint-Petersburg, Russian Federation.
[15] V.N. Karazin Kharkiv National University, Kharkiv, Ukraine.
[16] National Aerospace University “Kharkiv Aviation Institute”, Kharkiv, Ukraine.
[17] Bar-Ilan University, Ramat-Gan, Israel.
[18] National Science Center "Kharkiv Institute for Physics and Technology" of the National Academy of Sciences of Ukraine, Kharkiv, Ukraine.
[19] Anhui Institute of Optics and Fine Mechanics (AIOFM), Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui, China.
[20] Northwestern Polytechnical University, Xi’an, China.
1) SECURE-R2I – проект 7-ої рамкової програми ЕС, 2013-2016рр.
2) Українсько-молдовський проект МОН України 2017р-2018р..
- № ІІІ-2-11. «Дослідження оптичних та електронних явищ в штучностворенних однорідних і неоднорідних середовищах для розробки нових технологій оптоелектронного і мікросистемного приладобудування», державний реєстраційний номер теми 0111U002373;
- № ІІІ-41-12 «Фізичні та фізико-технологічні аспекти створення сучасних напівпровідникових матеріалів і функціональних структур для нано- і оптоелектроніки», державний реєстраційний номер теми 0112U002349;
5) Проект 7-ї Рамкової програми Комісії Європейського Союзу №609534 (FP7—SECURE-R2I) «Впровадження захисних голограм з використанням дифракційних оптичних елементів на основі халькогенідних стекол та азополімерів» (Implement Security Holograms utilising Diffractive Optical Elements based on Chalcogenide Glasses and Azopolymers);
- № ІІІ-2-16 «Дослідження особливостей хвильових оптичних явищ наноструктурованих/ нанокомпозитних середовищ та розробка технології функціональних матеріалів і структур оптоелектроніки», державний реєстраційний номер теми 0116U002606;
Publications
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2019
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