Simulation of the natural characteristics of vertical a-Si:H/μc-Si:H tandem solar cells. 2. Analysis of the results and comparison with the experiment

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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KryuchenkoYu.V., Sachenko A.V., Bobyl A.V., et al. //Semiconductors. – 2015. – Volume 49, Issue 5. – pp. 693-699.