P-n junction dynamics induced in a graphene channel by ferroelectric-domain motion in the substrate

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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A.I. Kurchak, E.A. Eliseev, S.V. Kalinin, M.V. Strikha, and A.N. Morozovska // Phys. Rew. Applied, 8 (2), 024027 (2017) https://doi.org/10.1103/PhysRevApplied.8.024027