V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine
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Pyroelectric origin of the carrier density modulation at grapheneferroelectric interface
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Department of Theoretical Physics
Development Division and fluctuation analysis of semiconductor materials and structures
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A.N.Morozovska, M.V.Strikha
// J. Appl. Phys., v.114, article number 014101, p.1-7 (2013)