V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine

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Detector of THz/subTHz radiation

  • Spectral region: ~30-300 GHz;
  • Operating temperature: T = 300 K;
  • Noise equivalent power: NEP140 GHz ~3-5*10-10 W/Hz1/2;
  • Sensitive area: S ~40x40 mkm2 (without antenna) and S ~2x2 mm2 (with antenna);
  • Responce time: 10-7 s;
  • Signal at detector output: 2.5 V;
  • Dimensions: 50x90 mm;
  • Diameter of focused  spot (DAiry(140 GHz)): ~ 5 mm.

At the picture there is presented Detector for registration and analysis of THz and sub-THz radiation. It includes semiconductor CdxHg1-xTe (0,17<=х<=0,3) bolometer with antenna and includes in the same case two aspheric Teflon lenses which focus radiation into sensitive element of bolometer that is integrated with amplifier.

Contacts: Ukraine, V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, This email address is being protected from spambots. You need JavaScript enabled to view it.