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Moskvin, P.P., Kryzhanivskyy, V.B., Rashkovetskyi, L.V., Morozov, A.V., Lytvyn, P.M. 2017 v.475, p.144-149. https://doi.org/10.1016/j.jcrysgro.2017.06.010
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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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