Gate control of junction impact ionization avalanche in SOI MOSFETs: theoretical model

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

V. Dobrovolsky, F. Sizov, S. Cristoloveanu // 6st SemOI WORKSHOP & 1st Ukrainian-French SOI Seminar. Abstracts, p.42-43, Kiev, 25-29, October (2010)

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