EPR study of the nitrogen containing defect center created in self-assembled 6H SiC nanostructure

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

E.Kalabukhova, D.Savchenko, B.Shanina, N.Bagraev, L.Klyachkin, A.Malyarenko // Mat. Sci. Forum, v.740-742, p.389-392 (2013)

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