EPR study of conduction electrons in heavily doped n-type 4H SiC

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

D.V. Savchenko, E.N. Kalabukhova, A. Pöppl, E.N. Mokhov, B.D. Shanina // Phys. Status Solidi B, v.248, №12, p.2952-2958 (2011)

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