Nitrogen donor aggregation in 4H-SiC investigated via g-tensor calculations

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

U. Gerstmann, E. Rauls, S. Greulich-Weber, E.N. Kalabukhova, D.V. Savchenko, A. Pöppl, F. Mauri // Mat. Sci. Forum, v.556-557, р.391-394 (2007)

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