EPR and ENDOR investigations of B acceptors in 3C-, 4H- and 6H- Silicon Carbide

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

S. Greulich-Weber, F. Feege, K.N. Kalabukhova, S.N. Lukin and J.-M. Spaeth, F.J. Adrian // Semicond. Sci. and Technol, v.13, p.59-70 (1998)

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