Formation of Shallow n-p Junctions in Cz-Si by Low-Energy Implantation of Carbon Ions.

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

B. Romanyuk, V. Melnik, V. Popov, V. Litovchenko, V. Babich, V. Ilchenko, V. Kladko, and J. Vanhellemont // ECS Transactions, 64 (11) 187-198 (2014)

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