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P. Sai, J. Jorudas, M. Dub, M. Sakowicz, V. Jakštas, D. B. But, P. Prystawko, et al., Appl. Phys. Lett. 115, no. 18, 83501 (2019). DOI: 10.1063/1.5119227
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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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