Strain induced mobility enhancement in p-type silicon structures: Bulk and quantum well (quantum kinetic approach

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Kovalenko K.L, Kozlovskiy S.I., Sharan N.N. // Journal of Applied Physics.- 2019, vol. 125, 082515. DOI: https://doi.org/10.1063/1.5045620

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