Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonanc

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Savchenko D., Kalabukhova E., Shanina B., CichoňS., HonolkaJ., KiselovV., Mokhov E.// Journal of Applied Physics – 2016 – V.119 – №4 – P.04570(1-7).

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