Effect of vacuum annealing on charge transport and trapping in a-Si1−xCx:H/c-Si heterostructures

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

Search

You are here: Home

Research divisions

Publications

dep15

dep-15-before

Effect of vacuum annealing on charge transport and trapping in a-Si1−xCx:H/c-Si heterostructures

Details: Hits: 6096

Y.V. Gomeniuk, S.O. Gordienko , A.N. Nazarov, A.V. Vasin, A.V. Rusavsky, V.G. Stepanov, V.S. Lysenko, D. Ballutaud, S. Ashok, Journal of Non-Crystalline Solids vol.358, pp.168–173 (2012)

Search

Nav view search

Navigation