Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

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A.N. Nazarov, I. Ferain, N.D. Akhavan, P. Razavi, R. Yu, and J. P. Colinge. Applied Physics Letters, V.99, P. 073502-1-3, (2011)

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