Analysis of electrically active N-O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Alt H.Ch., Gomeniuk Y.V., Bittersberger F., Kempf A. and Zemke D. Materials Science in Semiconductor Processing, vol. 9, p. 114-116. (2006)

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