Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration

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Alt H.Ch., Gomeniuk Y.V., Bittersberger F., Kempf A., and Zemke D.. Appl. Phys. Lett., 87, 151909-1–151909-3. (2005)

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