GaAsN formation by implantation of nitrogen into GaAs studied by infrared spectroscopy

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Alt H.Ch., Gomeniuk Y.V., Lenk G. and Wiedemann B. Physica B: Condensed Matter, v.340-342, p. 394-398. (2003)

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