Cryogenic investigations of SIMOX buried oxide parameters. In: Progress in SOI Structures and Devices Operating at Extreme Conditions

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Cryogenic investigations of SIMOX buried oxide parameters. In: Progress in SOI Structures and Devices Operating at Extreme Conditions

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Lysenko V.S., Tyagulski I.P., Osiyuk I.N. and Gomeniuk Y.V, ed. by F.Balestra et al., NATO ASI Series II, v.58, Kluwer Academic Publishers, Dordrecht, (2002) pp. 159-166.

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