Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Lysenko V.S., Tyagulski I.P., Gomeniuk Y.V., Osiyuk I.N. Microelectronics Reliability, v.40, p. 735-738. (2000)

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