Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias-temperature instability of buried oxide

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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A.N. Nazarov, I.P. Barchuk, V.S. Lysenko and J.P. Colinge, Microelectronic Engineering, vol.48, pp.379-382, (1999)

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