The behavior of minority carriers in thermally stimulated studies of the Si-SiO2 interface

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Gomeniuk Y.V., Lysenko V.S., Osiyuk I.N., Tyagulskii I.P. Physica Stat. Solidi (a), , v.140, p.173-178. (1993)

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