Current stochasticity of field emission of charge from traps in the transition layer of implanted MIS structures

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Gomeniuk Y.V., Litovski R.N., Lysenko V.S., Osiyuk I.N., Tyagulskii I.P. Applied Surface Science, v.59, p.91-94. (1992)

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