Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films

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Yu.Yu. Bacherikov, O.B. Okhrimenko, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn'ova, // Semiconductor Physics Quantum Electronics & Optoelectronics, Volume 15 (2012), p.13-16

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