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E. Simoen, A. Mercha, J.M. Rafi, C. Claeys, N. Lukyanchikova, A. Smolanka, and N. Garbar // J. of Appl. Phys. – 2004. - V. 95. - P. 4084-4092.
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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Research divisions Publications dep03 dep-03-before High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 m partially depleted silicon-on-insulator metal-oxide-semiconductor field- effect transistors
Research divisions Publications dep03 dep-03-before High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 m partially depleted silicon-on-insulator metal-oxide-semiconductor field- effect transistors