Electron valence-band tunnelling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistors

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Lukyanchikova N.B., Petrichuk M.V., Garbar N., Mercha A., Simoen E., and Claeys C. // J. Appl. Phys. – 2003. Vol. 94, № 7. P. 4461-4469.

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