Growth and characterization of low composition Ge, x in epi-Si1-xGex (x ≤ 10 %) active layer for fabrication of hydrogenated bottom solar cell

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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M Ajmal Khan, R Sato, K Sawano, P Sichanugrist, A Lukianov, Y Ishikawa// J. Phys. D: Appl. Phys. 51 (2018) 185107

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