V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
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V. Dobrovolsky, Fedir Sizov, S. Cristoloveanu // Advanced Materials Research, 276 (Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices), p. 43-49 (2011)