V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Свойства эпитаксиальных структур CdHgTe/CdZnTe после низкоэнергетического облучения ионами бора
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А.Б. Смирнов, Р.К.Савкина, Р.С. Удовицкая, А.З. Евменова, Ф.Ф. Сизов // Sensor Electronics and Microsystem Technologies, 3(9), p. 62- 69 (2012)