V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Properties of MBE CdxHg1-xTe/GaAs structures modified by ion-beam milling (IM)
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V.V. Bogoboyashchyy, S.A. Dvoretsky, I.I. Izhnin, N.N. Mikhailov, Yu.G. Sidorov, F.F. Sizov, V.S. Varavin, and V.A. Yudenkov // Phys. Status Sol. (c), 1, N2, p. 355 – 359 (2004)