Quantum kinetics approach to calculation of the low-ﬁeld mobility in the hole inversion layers of silicon MOSFET’s

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Search

You are here: Home

Research divisions

Publications

dep11

dep-11-2018

Quantum kinetics approach to calculation of the low-ﬁeld mobility in the hole inversion layers of silicon MOSFET’s

Details: Hits: 2424

KovalenkoK.L, KozlovskiyS.I., SharanN.N. – Journal of Computational Electronics – 2018 –17, No. 3 – P. 926-933. DOI: https://doi.org/10.1007/s10825-018-1163-3

Search

Nav view search

Navigation