The interface features of SiO2/SiC heterostructure according to methods for producing of the SiO2 thin films

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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The interface features of SiO2/SiC heterostructure according to methods for producing of the SiO2 thin films

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Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn’ova, O.B. Okhrimenko // Semiconductor Physics, Quantum Electronics & Optoelectronics, v.11, №3, p.125-130 (2011)

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