Breakdown of donor localized states on insulating side of strain-induced MI transition in Si and Ge

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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E.F. Venger, Yu.P. Dothsenko, V.V. Kolomiets // Phys. Stat. Sol. (b), v.211, p.137-142 (1999)

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