Trap parameters and conduction mechanism in HfO2–Ta2O5 mixed stacks in response to microwave irradiation

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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E. Atanassova, R.V. Konakova, V.F. Mitin, D. Spassov // Microelectronic Engineering, 87, 2294-2300. (2010)

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