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M. Kratzer, O.P. Dimitriev, A.N. Fedoryak, N.M. Osipyonok, P. Balaz, M. Balaz, M. Tesinsky, C. Teichert // J. Appl. Phys. v.125, pp.185305 (2019). https://doi.org/10.1063/1.5082636
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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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M. Kratzer, O.P. Dimitriev, A.N. Fedoryak, N.M. Osipyonok, P. Balaz, M. Balaz, M. Tesinsky, C. Teichert // J. Appl. Phys. v.125, pp.185305 (2019). https://doi.org/10.1063/1.5082636