Influence of trap states on the kinetics of luminescence and induced light absorbtion by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Influence of trap states on the kinetics of luminescence and induced light absorbtion by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses

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V.M. Kadan, I.Z. Indutnyi, V.A. Dan’ko, P.E. Shepeliavyi, I.M. Dmitruk, P.I. Korenyuk, I.V. Blonsky// Ukrainian Journal Physics, vol. 58, № 1, P. 20-25 (2013)

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