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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Research divisions Publications dep11 dep-11-2019 Near-band-edge emission enhancement and suppression of the deep levels in Ga-doped ZnO via surface plasmon-exciton coupling without a dielectric spacerAli Hassan, Muhammad Faisal Iqba, Stetsenko Maksym, Margitych Tetiana, Muhammad Azam, Zarfshan Kanwal, Iqra Irfan, Î’aikui Li, Yijian Jiang. // Journal of materials science: Materials and electronics, DOI: https://doi.org/10.1007/s10854-019-02418-2
