Temperature dependence of the lifetime of nonequilibrium charge carriers in GaP diodes under condition of recombination current domination

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Krasnov V. A., Shutov S. V., Yerochin S. Yu. // Current Applied Physics, 2015, Vol.15, Issue 4, P. 504-510.

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