Impact of processing and back-gate biasing condition on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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V. Kudina, N. Garbar, E. Simoen, C. Claeys.// Solid-State Electronics 105 (2015), pp 37–44.

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