The electron spin resonance study of heavily nitrogen doped 6H SiC crystals

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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The electron spin resonance study of heavily nitrogen doped 6H SiC crystals

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Savchenko D.V. // J. Appl. Phys. – V.117 – №4 – P.045708-1-045708-6 (2015).