Polarization memory effect in the photoluminescence of nc-Si−SiOx light-emitting structures

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Katerina Michailovska, Ivan Indutnyi, Petro Shepeliavyi,Mykola Sopinskyy // Nanoscale Research Letters 2016, Vol. 11, Paper 277

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