V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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dep07
dep-07-2016
The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range
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Sachenko A.V., Belyaev A.E., Boltovets N.S., Konakova R.V., Vitusevich S.A., Novitskii S.V., Sheremet V.N., Pilipchuk A.S. // Technical Physics Letters.–2016. – V.42, N.6. – P. 649-651