V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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dep-07-2016
Influence of strain relaxation on the relative orientation of ZnO and ZnMnO wurtzite lattice with respect to sapphire substrates
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Avramenko K. A., Bryksa V. P., Petrenko T. L., Kladko V. P., Stanchu H. V., Belyaev A. E., Deparis C., Zuñiga-Pérez J., Morhain C. // Materials Research Express.–2016. – V.3, – P.095902